FGA40S65SH ON Semiconductor / Fairchild

Description: IGBT TRENCH FS 650V 80A TO-3PN, Power - Max: 268 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 80 A, Gate Charge: 73 nC, Test Condition: 400V, 40A, 6Ohm, 15V, Switching Energy: 194µJ (on), 388µJ (off), Td (on/off) @ 25°C: 19.2ns/68.8ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.