FGA50N100BNTTU Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: IGBT, 50A, 1000V, N-CHANNEL
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 34ns/243ns
Test Condition: 600V, 60A, 10Ohm, 15V
Gate Charge: 257 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 156 W
Description: IGBT, 50A, 1000V, N-CHANNEL
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 34ns/243ns
Test Condition: 600V, 60A, 10Ohm, 15V
Gate Charge: 257 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 156 W
auf Bestellung 2102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
116+ | 4.23 EUR |
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Technische Details FGA50N100BNTTU Fairchild Semiconductor
Description: IGBT, 50A, 1000V, N-CHANNEL, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A, Supplier Device Package: TO-3P, IGBT Type: NPT and Trench, Td (on/off) @ 25°C: 34ns/243ns, Test Condition: 600V, 60A, 10Ohm, 15V, Gate Charge: 257 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 156 W.
Weitere Produktangebote FGA50N100BNTTU
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FGA50N100BNTTU | Hersteller : ONSEMI |
Description: ONSEMI - FGA50N100BNTTU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2102 Stücke: Lieferzeit 14-21 Tag (e) |
||
FGA50N100BNTTU | Hersteller : onsemi |
Description: IGBT 1000V 50A 156W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-3P IGBT Type: NPT and Trench Td (on/off) @ 25°C: 34ns/243ns Test Condition: 600V, 60A, 10Ohm, 15V Gate Charge: 257 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 200 A Power - Max: 156 W |
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