FGA50S110P ON Semiconductor
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 207+ | 2.65 EUR |
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Technische Details FGA50S110P ON Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Gate Charge: 195 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1100 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 300 W.
Weitere Produktangebote FGA50S110P nach Preis ab 1.99 EUR bis 5.44 EUR
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FGA50S110P | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1100V 50A 300W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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FGA50S110P | Hersteller : Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Gate Charge: 195 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1100 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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FGA50S110P | Hersteller : onsemi / Fairchild |
IGBT Transistors 1100 V, 50 A Shorted-anode IGBT |
auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGA50S110P | Hersteller : ONSEMI |
Description: ONSEMI - FGA50S110P - IGBT, 3 Pin(s) tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, max.: 175°C usEccn: EAR99 Produktpalette: - SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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FGA50S110P | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1100V 50A 300000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FGA50S110P | Hersteller : onsemi |
Description: IGBT TRENCH/FS 1100V 50A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Gate Charge: 195 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1100 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
Produkt ist nicht verfügbar |