FGA50S110P Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Power - Max: 300 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1100 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 195 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 181+ | 2.72 EUR |
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Technische Details FGA50S110P Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO, Power - Max: 300 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 1100 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, Gate Charge: 195 nC, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Bulk.
Weitere Produktangebote FGA50S110P nach Preis ab 3.12 EUR bis 5.44 EUR
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FGA50S110P | onsemi / Fairchild |
IGBT Transistors 1100 V, 50 A Shorted-anode IGBT |
auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGA50S110P |
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Hersteller: onsemi / Fairchild
IGBT Transistors 1100 V, 50 A Shorted-anode IGBT
IGBT Transistors 1100 V, 50 A Shorted-anode IGBT
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.44 EUR |
| 10+ | 4.89 EUR |
| 100+ | 4.1 EUR |
| 450+ | 3.63 EUR |
| 900+ | 3.29 EUR |
| 2700+ | 3.22 EUR |
| 5400+ | 3.12 EUR |