FGA50T65SHD onsemi
Hersteller: onsemiDescription: IGBT TRENCH FS 650V 100A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/73.6ns
Switching Energy: 1.28mJ (on), 384µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 87 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319 W
auf Bestellung 441 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.64 EUR |
| 30+ | 4.87 EUR |
| 120+ | 4.04 EUR |
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Technische Details FGA50T65SHD onsemi
Description: IGBT TRENCH FS 650V 100A TO-3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34.6 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22.4ns/73.6ns, Switching Energy: 1.28mJ (on), 384µJ (off), Test Condition: 400V, 50A, 6Ohm, 15V, Gate Charge: 87 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 319 W.
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