FGA6065ADF ON Semiconductor
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details FGA6065ADF ON Semiconductor
Description: IGBT TRENCH/FS 650V 120A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 110 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 25.6ns/71ns, Switching Energy: 2.46mJ (on), 520µJ (off), Test Condition: 400V, 60A, 6Ohm, 15V, Gate Charge: 84 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 306 W.
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FGA6065ADF | Hersteller : ON Semiconductor / Fairchild |
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FGA6065ADF | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 120A 306W 3-Pin(3+Tab) TO-3P Tube |
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FGA6065ADF | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGA6065ADF | Hersteller : onsemi |
Description: IGBT TRENCH/FS 650V 120A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25.6ns/71ns Switching Energy: 2.46mJ (on), 520µJ (off) Test Condition: 400V, 60A, 6Ohm, 15V Gate Charge: 84 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 306 W |
Produkt ist nicht verfügbar |