FGA6065ADF

FGA6065ADF ON Semiconductor / Fairchild


FGA6065ADF_D-2313271.pdf
Hersteller: ON Semiconductor / Fairchild
IGBT Transistors 650V FS Gen3 Trench IGBT
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Technische Details FGA6065ADF ON Semiconductor / Fairchild

Description: IGBT TRENCH/FS 650V 120A TO3PN, Power - Max: 306 W, Current - Collector Pulsed (Icm): 180 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 120 A, Part Status: Obsolete, Gate Charge: 84 nC, Test Condition: 400V, 60A, 6Ohm, 15V, Switching Energy: 2.46mJ (on), 520µJ (off), Td (on/off) @ 25°C: 25.6ns/71ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Reverse Recovery Time (trr): 110 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.

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FGA6065ADF FGA6065ADF Hersteller : onsemi fga6065adf-d.pdf Description: IGBT TRENCH/FS 650V 120A TO3PN
Power - Max: 306 W
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Part Status: Obsolete
Gate Charge: 84 nC
Test Condition: 400V, 60A, 6Ohm, 15V
Switching Energy: 2.46mJ (on), 520µJ (off)
Td (on/off) @ 25°C: 25.6ns/71ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Reverse Recovery Time (trr): 110 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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