FGB20N6S2 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 7.7ns/87ns
Switching Energy: 25µJ (on), 58µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
| Anzahl | Privatkunde |
|---|---|
| 460+ | 1.27 EUR |
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Technische Details FGB20N6S2 Fairchild Semiconductor
Description: N-CHANNEL IGBT, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 7.7ns/87ns, Switching Energy: 25µJ (on), 58µJ (off), Test Condition: 390V, 7A, 25Ohm, 15V, Gate Charge: 30 nC, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 125 W.