FGB20N6S2 Fairchild Semiconductor

Description: N-CHANNEL IGBT, Power - Max: 125 W, Current - Collector Pulsed (Icm): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 28 A, Gate Charge: 30 nC, Test Condition: 390V, 7A, 25Ohm, 15V, Switching Energy: 25µJ (on), 58µJ (off), Td (on/off) @ 25°C: 7.7ns/87ns, Supplier Device Package: TO-263 (D2Pak), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.