FGB3040G2-F085 ONSEMI
Hersteller: ONSEMICategory: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Collector-emitter voltage: 400V
Gate-emitter voltage: ±10V
Collector current: 25.6A
Type of transistor: IGBT
Application: ignition systems
Power dissipation: 150W
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 21nC
Mounting: SMD
Case: D2PAK
auf Bestellung 743 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 3.42 EUR |
| 25+ | 2.97 EUR |
| 26+ | 2.8 EUR |
| 250+ | 2.77 EUR |
| 500+ | 2.7 EUR |
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Technische Details FGB3040G2-F085 ONSEMI
Description: IGBT 400V 41A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 900ns/4.8µs, Gate Charge: 21 nC, Part Status: Active, Current - Collector (Ic) (Max): 41 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 150 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FGB3040G2-F085 nach Preis ab 2.7 EUR bis 5.79 EUR
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FGB3040G2-F085 | Hersteller : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level Collector-emitter voltage: 400V Gate-emitter voltage: ±10V Collector current: 25.6A Type of transistor: IGBT Application: ignition systems Power dissipation: 150W Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Gate charge: 21nC Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 743 Stücke: Lieferzeit 7-14 Tag (e) |
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FGB3040G2-F085 | Hersteller : onsemi |
Description: IGBT 400V 41A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 900ns/4.8µs Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB3040G2-F085 | Hersteller : onsemi |
Description: IGBT 400V 41A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 900ns/4.8µs Gate Charge: 21 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Qualification: AEC-Q101 |
auf Bestellung 1405 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB3040G2-F085 | Hersteller : onsemi / Fairchild |
IGBTs ECOSPARK 2 IGNITION IGBT |
auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB3040G2-F085 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 400V 41A 150000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FGB3040G2-F085 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 400V 41A 150W Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |