FGH30T65UPDT-F155 ON Semiconductor

Description: INSULATED GATE BIPOLAR TRANSISTO, Power - Max: 250 W, Current - Collector Pulsed (Icm): 90 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 60 A, Part Status: Active, Gate Charge: 155 nC, Test Condition: 400V, 30A, 8Ohm, 15V, Switching Energy: 760µJ (on), 400µJ (off), Td (on/off) @ 25°C: 22ns/139ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A, Reverse Recovery Time (trr): 33 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.