Technische Details FGH4L50T65SQD ON Semiconductor
Description: IGBT TRENCH FS 650V 80A TO-247, Packaging: Tube, Part Status: Obsolete, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247-4L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22.4ns/162ns, Switching Energy: 660µJ (on), 440µJ (off), Test Condition: 400V, 50A, 15Ohm, 15V, Gate Charge: 92 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 268 W.
Weitere Produktangebote FGH4L50T65SQD nach Preis ab 4.2 EUR bis 10.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FGH4L50T65SQD | onsemi |
 Description: IGBT TRENCH FS 650V 80A TO-247Packaging: Tube Part Status: Obsolete Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22.4ns/162ns Switching Energy: 660µJ (on), 440µJ (off) Test Condition: 400V, 50A, 15Ohm, 15V Gate Charge: 92 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
auf Bestellung 101 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH4L50T65SQD | onsemi |
IGBTs FS4 T TO247 50A 650V 4L |
auf Bestellung 678 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH4L50T65SQD | ONSEMI |
Description: ONSEMI - FGH4L50T65SQD - IGBT, 80 A, 1.6 V, 268 W, 650 V, TO-247, 4 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 268W Bauform - Transistor: TO-247 Dauerkollektorstrom: 80A Anzahl der Pins: 4Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 417 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGH4L50T65SQD |
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Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Part Status: Obsolete
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/162ns
Switching Energy: 660µJ (on), 440µJ (off)
Test Condition: 400V, 50A, 15Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Part Status: Obsolete
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/162ns
Switching Energy: 660µJ (on), 440µJ (off)
Test Condition: 400V, 50A, 15Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.08 EUR |
| 10+ | 6.14 EUR |
| 30+ | 5.57 EUR |
| FGH4L50T65SQD |
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Hersteller: onsemi
IGBTs FS4 T TO247 50A 650V 4L
IGBTs FS4 T TO247 50A 650V 4L
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.1 EUR |
| 10+ | 5.59 EUR |
| 120+ | 4.84 EUR |
| 1020+ | 4.76 EUR |
| FGH4L50T65SQD |
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Hersteller: ONSEMI
Description: ONSEMI - FGH4L50T65SQD - IGBT, 80 A, 1.6 V, 268 W, 650 V, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.6V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 268W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - FGH4L50T65SQD - IGBT, 80 A, 1.6 V, 268 W, 650 V, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.6V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 268W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 10.38 EUR |
| 44+ | 5.33 EUR |
| 100+ | 4.2 EUR |