FGH4L75T65MQDC50 onsemi
Hersteller: onsemiDescription: IGBT FS 650V 110A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/187ns
Switching Energy: 720µJ (on), 960µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 385 W
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 17.05 EUR |
| 30+ | 10.2 EUR |
| 120+ | 8.7 EUR |
| 510+ | 8.16 EUR |
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Technische Details FGH4L75T65MQDC50 onsemi
Description: IGBT FS 650V 110A TO-247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A, Supplier Device Package: TO-247-4L, IGBT Type: Field Stop, Td (on/off) @ 25°C: 29ns/187ns, Switching Energy: 720µJ (on), 960µJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 146 nC, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 385 W.
Weitere Produktangebote FGH4L75T65MQDC50 nach Preis ab 9.42 EUR bis 17.21 EUR
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FGH4L75T65MQDC50 | Hersteller : onsemi |
IGBTs 650V Field stop 4th generation mid speed IGBT with co-pack SiC diode |
auf Bestellung 310 Stücke: Lieferzeit 10-14 Tag (e) |
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