FGH4L75T65MQDC50 onsemi
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.22 EUR |
| 10+ | 10.42 EUR |
| 30+ | 9.47 EUR |
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Technische Details FGH4L75T65MQDC50 onsemi
Description: IGBT FS 650V 110A TO-247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A, Supplier Device Package: TO-247-4L, IGBT Type: Field Stop, Td (on/off) @ 25°C: 29ns/187ns, Switching Energy: 720µJ (on), 960µJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 146 nC, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 385 W.
Weitere Produktangebote FGH4L75T65MQDC50 nach Preis ab 8.97 EUR bis 17.60 EUR
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FGH4L75T65MQDC50 | Hersteller : onsemi |
 Description: IGBT FS 650V 110A TO-247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-4L IGBT Type: Field Stop Td (on/off) @ 25°C: 29ns/187ns Switching Energy: 720µJ (on), 960µJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 146 nC Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 385 W |
auf Bestellung 438 Stücke: Lieferzeit 10-14 Tag (e) |
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