FGH4L75T65MQDC50 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 450+ | 10.95 EUR |
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Technische Details FGH4L75T65MQDC50 ON Semiconductor
Description: IGBT FS 650V 110A TO-247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A, Supplier Device Package: TO-247-4L, IGBT Type: Field Stop, Td (on/off) @ 25°C: 29ns/187ns, Switching Energy: 720µJ (on), 960µJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 146 nC, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 385 W.
Weitere Produktangebote FGH4L75T65MQDC50 nach Preis ab 11.02 EUR bis 21.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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FGH4L75T65MQDC50 | onsemi |
 Description: IGBT FS 650V 110A TO-247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-4L IGBT Type: Field Stop Td (on/off) @ 25°C: 29ns/187ns Switching Energy: 720µJ (on), 960µJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 146 nC Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 385 W |
auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGH4L75T65MQDC50 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 650V; 110A; 385W; TO247-4; Eon: 0.72mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 385W Case: TO247-4 Gate-emitter voltage: ±30V Mounting: THT Gate charge: 146nC Turn-off switching energy: 0.96mJ Turn-on switching energy: 0.72mJ Technology: Field Stop Turn-on time: 29ns |
auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FGH4L75T65MQDC50 |
|
Hersteller: onsemi
Description: IGBT FS 650V 110A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/187ns
Switching Energy: 720µJ (on), 960µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 385 W
Description: IGBT FS 650V 110A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 29ns/187ns
Switching Energy: 720µJ (on), 960µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 146 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 385 W
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.61 EUR |
| 30+ | 12.92 EUR |
| 120+ | 11.02 EUR |
| FGH4L75T65MQDC50 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 110A; 385W; TO247-4; Eon: 0.72mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 385W
Case: TO247-4
Gate-emitter voltage: ±30V
Mounting: THT
Gate charge: 146nC
Turn-off switching energy: 0.96mJ
Turn-on switching energy: 0.72mJ
Technology: Field Stop
Turn-on time: 29ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 110A; 385W; TO247-4; Eon: 0.72mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 110A
Power dissipation: 385W
Case: TO247-4
Gate-emitter voltage: ±30V
Mounting: THT
Gate charge: 146nC
Turn-off switching energy: 0.96mJ
Turn-on switching energy: 0.72mJ
Technology: Field Stop
Turn-on time: 29ns
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)