FGHL50T65LQDTL4 onsemi
Hersteller: onsemiIGBT Transistors FS4 LOW VCESAT IGBT 650V 50A TO247-4L WITH FULL RATED CURRENT DIODE
auf Bestellung 450 Stücke:
Lieferzeit 185-189 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.96 EUR |
| 10+ | 6.67 EUR |
| 25+ | 6.32 EUR |
| 100+ | 5.4 EUR |
| 250+ | 5.1 EUR |
| 450+ | 4.8 EUR |
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Technische Details FGHL50T65LQDTL4 onsemi
Description: IGBT TRENCH FS 650V 80A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A, Supplier Device Package: TO-247-4L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/424ns, Switching Energy: 410µJ (on), 860µJ (off), Test Condition: 400V, 50A, 4.7Ohm, 15V, Gate Charge: 509 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 341 W.
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FGHL50T65LQDTL4 | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 80A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/424ns Switching Energy: 410µJ (on), 860µJ (off) Test Condition: 400V, 50A, 4.7Ohm, 15V Gate Charge: 509 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 341 W |
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