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FGHL50T65LQDTL4

FGHL50T65LQDTL4 onsemi

fghl50t65lqdtl4-d.pdf Hersteller: onsemi
IGBTs IGBT - 650 V 50 A FS4 low Vce(sat) IGBT with full rated copack diode
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Technische Details FGHL50T65LQDTL4 onsemi

Description: IGBT TRENCH FS 650V 80A TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A, Supplier Device Package: TO-247-4L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/424ns, Switching Energy: 410µJ (on), 860µJ (off), Test Condition: 400V, 50A, 4.7Ohm, 15V, Gate Charge: 509 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 341 W.

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FGHL50T65LQDTL4 FGHL50T65LQDTL4 Hersteller : onsemi fghl50t65lqdtl4-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/424ns
Switching Energy: 410µJ (on), 860µJ (off)
Test Condition: 400V, 50A, 4.7Ohm, 15V
Gate Charge: 509 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 341 W
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