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FGHL60T120RWD

FGHL60T120RWD onsemi

FGHL60T120RWD_D-3366823.pdf Hersteller: onsemi
IGBT Transistors 1200V/60A FS7 IGBT SCR TO247
auf Bestellung 450 Stücke:
Lieferzeit 241-245 Tag (e)
Anzahl Preis ohne MwSt
1+14.82 EUR
10+ 12.71 EUR
30+ 11.53 EUR
120+ 10.58 EUR
270+ 9.94 EUR
510+ 9.33 EUR
1020+ 8.4 EUR
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Technische Details FGHL60T120RWD onsemi

Description: 1200V, 60A TRENCH FIELD STOP VII, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 257 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 51ns/250ns, Switching Energy: 4.5mJ (on), 3.4mJ (off), Test Condition: 600V, 60A, 4.7Ohm, 15V, Gate Charge: 256 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 833 W.

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FGHL60T120RWD FGHL60T120RWD Hersteller : onsemi fghl60t120rwd-d.pdf Description: 1200V, 60A TRENCH FIELD STOP VII
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 257 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 51ns/250ns
Switching Energy: 4.5mJ (on), 3.4mJ (off)
Test Condition: 600V, 60A, 4.7Ohm, 15V
Gate Charge: 256 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 833 W
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