FGPF30N30TTU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: IGBT, 300V, N-CHANNEL, TO-220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 10A
Supplier Device Package: TO-220F-3
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/130ns
Test Condition: 200V, 20A, 20Ohm, 15V
Gate Charge: 65 nC
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 44.6 W
auf Bestellung 5305 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 329+ | 1.46 EUR |
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Technische Details FGPF30N30TTU Fairchild Semiconductor
Description: IGBT, 300V, N-CHANNEL, TO-220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 10A, Supplier Device Package: TO-220F-3, IGBT Type: Trench, Td (on/off) @ 25°C: 22ns/130ns, Test Condition: 200V, 20A, 20Ohm, 15V, Gate Charge: 65 nC, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 44.6 W.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FGPF30N30TTU | Hersteller : ONSEMI |
Description: ONSEMI - FGPF30N30TTU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 5305 Stücke: Lieferzeit 14-21 Tag (e) |