Technische Details FJA4310OTU On Semiconductor
Description: TRANS NPN 140V 10A TO3P, Power - Max: 100 W, Voltage - Collector Emitter Breakdown (Max): 140 V, Current - Collector (Ic) (Max): 10 A, Part Status: Obsolete, Supplier Device Package: TO-3P, Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Weitere Produktangebote FJA4310OTU
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
FJA4310OTU | onsemi |
 Description: TRANS NPN 140V 10A TO3PPower - Max: 100 W Voltage - Collector Emitter Breakdown (Max): 140 V Current - Collector (Ic) (Max): 10 A Part Status: Obsolete Supplier Device Package: TO-3P Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FJA4310OTU | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FJA4310OTU |
|
Hersteller: onsemi
Description: TRANS NPN 140V 10A TO3P
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: TRANS NPN 140V 10A TO3P
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJA4310OTU |
|
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH