FJD3076TM

FJD3076TM ON Semiconductor / Fairchild


FJD3076-1123972.pdf Hersteller: ON Semiconductor / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
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Technische Details FJD3076TM ON Semiconductor / Fairchild

Description: TRANS NPN 32V 2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V, Frequency - Transition: 100MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 1 W.

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FJD3076TM FJD3076TM Hersteller : onsemi fjd3076-d.pdf Description: TRANS NPN 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
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