FJI5603DTU ONSEMI
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 100W
Current gain: 20...35
Mounting: THT
Frequency: 5MHz
Kind of package: tube
Case: I2PAK
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Technische Details FJI5603DTU ONSEMI
Description: TRANS NPN 800V 3A I2PAK, Power - Max: 100 W, Voltage - Collector Emitter Breakdown (Max): 800 V, Current - Collector (Ic) (Max): 3 A, Part Status: Active, Supplier Device Package: TO-262 (I2PAK), Frequency - Transition: 5MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V, Current - Collector Cutoff (Max): 100µA, Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Weitere Produktangebote FJI5603DTU nach Preis ab 1.54 EUR bis 5.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FJI5603DTU | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Silicon |
auf Bestellung 918 Stücke: Lieferzeit 10-14 Tag (e) |
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FJI5603DTU | onsemi |
Bipolar Transistors - BJT NPN Silicon |
auf Bestellung 2539 Stücke: Lieferzeit 10-14 Tag (e) |
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FJI5603DTU | onsemi |
Description: TRANS NPN 800V 3A I2PAK Power - Max: 100 W Voltage - Collector Emitter Breakdown (Max): 800 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: TO-262 (I2PAK) Frequency - Transition: 5MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
auf Bestellung 1334 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FJI5603DTU |
|
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Silicon
Bipolar Transistors - BJT NPN Silicon
auf Bestellung 918 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.47 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.86 EUR |
| 250+ | 1.84 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.54 EUR |
| FJI5603DTU |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN Silicon
Bipolar Transistors - BJT NPN Silicon
auf Bestellung 2539 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.66 EUR |
| 10+ | 2.31 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.54 EUR |
| FJI5603DTU |
|
Hersteller: onsemi
Description: TRANS NPN 800V 3A I2PAK
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-262 (I2PAK)
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: TRANS NPN 800V 3A I2PAK
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-262 (I2PAK)
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 1334 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.18 EUR |
| 50+ | 2.53 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.69 EUR |