FJP5200OTU onsemi
Hersteller: onsemi
Description: TRANS NPN 250V 17A TO220-3
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: -50°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details FJP5200OTU onsemi
Description: TRANS NPN 250V 17A TO220-3, Power - Max: 80 W, Voltage - Collector Emitter Breakdown (Max): 250 V, Current - Collector (Ic) (Max): 17 A, Part Status: Obsolete, Supplier Device Package: TO-220-3, Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V, Current - Collector Cutoff (Max): 5µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A, Operating Temperature: -50°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote FJP5200OTU
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
FJP5200OTU | onsemi / Fairchild |
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Im Einkaufswagen Stück im Wert von UAH |
| FJP5200OTU |
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Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Epitaxial Silicon
Bipolar Transistors - BJT NPN Epitaxial Silicon
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


