FK4B01110L Nuvoton Technology Corporation

Description: SINGLE NCH MOSFET 12V, 2.3A 57MO, Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.55 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: ALGA004-W-0606-RA01, Vgs(th) (Max) @ Id: 1V @ 118µA, Power Dissipation (Max): 340mW (Ta), Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 4-XFLGA, Packaging: Tape & Reel (TR).