Technische Details FKP300A Sanken Electric Company, Ltd.
Description: MOSFET N-CH 300V 30A TO3PF, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Power Dissipation (Max): 85W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Bulk.
Weitere Produktangebote FKP300A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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FKP300A | Sanken Electric USA Inc. |
 Description: MOSFET N-CH 300V 30A TO3PFInput Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1080 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FKP300A |
|
Hersteller: Sanken Electric USA Inc.
Description: MOSFET N-CH 300V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 300V 30A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 1080 Stücke
Im Einkaufswagen
Stück im Wert von UAH