Technische Details FKV550N Allegro
Description: MOSFET N-CH 50V 50A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 4.2V @ 250µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Weitere Produktangebote FKV550N
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FKV550N | Sanken Electric USA Inc. |
Description: MOSFET N-CH 50V 50A TO220FInput Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F Vgs(th) (Max) @ Id: 4.2V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
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| FKV550N |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET N-CH 50V 50A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 50V 50A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


