FMA9AT148 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.5 EUR |
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Technische Details FMA9AT148 Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5, Mounting Type: Surface Mount, Package / Case: SC-74A, SOT-753, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SMT5, Resistor - Emitter Base (R2): 10kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 PNP - Pre-Biased (Dual).
Weitere Produktangebote FMA9AT148
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FMA9AT148 | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased DUAL PNP 50V 50MA SMT5 |
auf Bestellung 3655 Stücke: Lieferzeit 10-14 Tag (e) |
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| FMA9AT148 | Hersteller : ROHM |
00+ SOT23-5 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
||
|
FMA9AT148 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) |
Produkt ist nicht verfügbar |
