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FMMT411QTA

FMMT411QTA Diodes Incorporated

FMMT411Q.pdf Hersteller: Diodes Incorporated
Description: Avalanche Transistor SOT23 T&R 3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Grade: Automotive
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 800 mW
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.39 EUR
Mindestbestellmenge: 3000
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Technische Details FMMT411QTA Diodes Incorporated

Description: Avalanche Transistor SOT23 T&R 3, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Avalanche Mode, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Frequency - Transition: 40MHz, Supplier Device Package: SOT-23 (Type DN), Grade: Automotive, Current - Collector (Ic) (Max): 900 mA, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 800 mW, Qualification: AEC-Q101.

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FMMT411QTA Hersteller : Diodes Incorporated FMMT411Q.pdf Bipolar Transistors - BJT Avalanche Transistor SOT23 T&R 3K
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