FMMT417TD Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 330 mW
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Technische Details FMMT417TD Diodes Incorporated
Description: TRANS NPN 100V 0.5A SOT-23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Avalanche Mode, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V, Frequency - Transition: 40MHz, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 330 mW.
Weitere Produktangebote FMMT417TD nach Preis ab 10.53 EUR bis 21.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FMMT417TD | Diodes Incorporated |
Bipolar Transistors - BJT NPN Avalanche |
auf Bestellung 5409 Stücke: Lieferzeit 10-14 Tag (e) |
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FMMT417TD | Diodes Incorporated |
Description: TRANS NPN 100V 0.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Avalanche Mode Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V Frequency - Transition: 40MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 330 mW |
auf Bestellung 10516 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FMMT417TD |
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Hersteller: Diodes Incorporated
Bipolar Transistors - BJT NPN Avalanche
Bipolar Transistors - BJT NPN Avalanche
auf Bestellung 5409 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21 EUR |
| 10+ | 14.6 EUR |
| 100+ | 12.42 EUR |
| 500+ | 10.53 EUR |
| FMMT417TD |
![]() |
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 330 mW
Description: TRANS NPN 100V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 330 mW
auf Bestellung 10516 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.09 EUR |
| 10+ | 14.64 EUR |
| 100+ | 12.46 EUR |

