FMMTA06TA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 0.5A SOT-23-3
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA
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Technische Details FMMTA06TA Diodes Incorporated
Description: TRANS NPN 80V 0.5A SOT-23-3, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Obsolete, Supplier Device Package: SOT-23-3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote FMMTA06TA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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FMMTA06TA | Diodes Incorporated |
Description: TRANS NPN 80V 0.5A SOT-23-3 Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
FMMTA06TA | Diodes Incorporated |
 Bipolar Transistors - BJT NPN Medium Power |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FMMTA06TA |
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 0.5A SOT-23-3
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 80V 0.5A SOT-23-3
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FMMTA06TA |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT NPN Medium Power
Bipolar Transistors - BJT NPN Medium Power
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH