FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 6A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 94W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 12A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
| Anzahl | Privatkunde |
|---|---|
| 2+ | 43.65 EUR |
| 3+ | 39.21 EUR |
| 10+ | 36.6 EUR |
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Technische Details FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES
Category: IGBT modules, Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A, Semiconductor structure: diode/transistor, Case: AG-EASY1B-1, Gate-emitter voltage: ±20V, Collector current: 6A, Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Power dissipation: 94W, Technology: EasyPIM™ 1B, Mechanical mounting: screw, Pulsed collector current: 12A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB.
Weitere Produktangebote FP06R12W1T4B3BOMA1 nach Preis ab 59.27 EUR bis 75.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FP06R12W1T4_B3 | Infineon Technologies |
IGBT Modules LOW POWER EASY |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| FP06R12W1T4_B3 |
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Hersteller: Infineon Technologies
IGBT Modules LOW POWER EASY
IGBT Modules LOW POWER EASY
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 75.62 EUR |
| 10+ | 73.2 EUR |
| 24+ | 66.19 EUR |
| 48+ | 61.09 EUR |
| 120+ | 59.42 EUR |
| 264+ | 59.36 EUR |
| 504+ | 59.27 EUR |