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Technische Details FP06R12W1T4_B3 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A, Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Power dissipation: 94W, Technology: EasyPIM™ 1B, Mechanical mounting: screw, Pulsed collector current: 12A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Semiconductor structure: diode/transistor, Case: AG-EASY1B-1, Gate-emitter voltage: ±20V, Collector current: 6A.
Weitere Produktangebote FP06R12W1T4_B3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
FP06R12W1T4B3BOMA1 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Power dissipation: 94W Technology: EasyPIM™ 1B Mechanical mounting: screw Pulsed collector current: 12A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: AG-EASY1B-1 Gate-emitter voltage: ±20V Collector current: 6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FP06R12W1T4B3BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 94W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 12A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 6A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 94W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 12A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH