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FP100R07N3E4BOSA1

FP100R07N3E4BOSA1 Infineon Technologies

Infineon-FP100R07N3E4-DS-v02_01-en_de.pdf?fileId=db3a3043324cae8c013262bbe5453970 Hersteller: Infineon Technologies
Description: IGBT MOD 650V 100A 335W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+151.26 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FP100R07N3E4BOSA1 Infineon Technologies

Description: IGBT MOD 650V 100A 335W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 335 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V.

Weitere Produktangebote FP100R07N3E4BOSA1 nach Preis ab 165.40 EUR bis 165.40 EUR

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FP100R07N3E4BOSA1 FP100R07N3E4BOSA1 Hersteller : Infineon Technologies Infineon-FP100R07N3E4-DS-v02_01-en_de.pdf?fileId=db3a3043324cae8c013262bbe5453970 Description: IGBT MOD 650V 100A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+165.40 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FP100R07N3E4BOSA1 FP100R07N3E4BOSA1 Hersteller : Infineon Technologies 2608ds_fp100r07n3e4_2_0.pdffolderiddb3a304412b407950112b4095b0601e3fi.pdf Trench and Field Stop IGBT Module
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH