FP150R07N3E4B11BOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 150A 430W
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details FP150R07N3E4B11BOSA1 Infineon Technologies
Description: IGBT MOD 650V 150A 430W, Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 430 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 150 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A, Operating Temperature: -40°C ~ 150°C, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Weitere Produktangebote FP150R07N3E4B11BOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
FP150R07N3E4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 150A 430WInput Capacitance (Cies) @ Vce: 9.3 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 430 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 150 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A Operating Temperature: -40°C ~ 150°C Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FP150R07N3E4B11BOSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 150A 430W
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 650V 150A 430W
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH

