FP150R12KT4PB11BPSA1 Infineon Technologies

Description: IGBT MODULE 1200V 150A, Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 150 A, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.