FP25R12KE3BOSA1 Infineon Technologies
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Technische Details FP25R12KE3BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 40A 155W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 155 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V.
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FP25R12KE3BOSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 40A 155W 24-Pin ECONO2-5 Tray |
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FP25R12KE3BOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 40A 155W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V |
Produkt ist nicht verfügbar |
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| FP25R12KE3BOSA1 | Hersteller : Infineon Technologies |
IGBT Modules LOW POWER ECONO |
Produkt ist nicht verfügbar |