FP50R07N2E4_B11 Infineon Technologies
Hersteller: Infineon Technologies
Description: FP50R07 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details FP50R07N2E4_B11 Infineon Technologies
Description: FP50R07 - IGBT MODULE, Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 20 mW, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 70 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: AG-ECONO2B, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Weitere Produktangebote FP50R07N2E4_B11
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| FP50R07N2E4_B11 | Infineon Technologies |
IGBT Modules IGBT Module 50A 650V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FP50R07N2E4_B11 |
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Hersteller: Infineon Technologies
IGBT Modules IGBT Module 50A 650V
IGBT Modules IGBT Module 50A 650V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
