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FP50R12W2T7PBPSA1 Infineon Technologies



Hersteller: Infineon Technologies
Description: LOW POWER EASY
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 5 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details FP50R12W2T7PBPSA1 Infineon Technologies

Description: LOW POWER EASY, Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V, Current - Collector Cutoff (Max): 5 µA, Power - Max: 20 mW, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: AG-EASY2B, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Three Phase Inverter, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.

Weitere Produktangebote FP50R12W2T7PBPSA1

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FP50R12W2T7PBPSA1 FP50R12W2T7PBPSA1 Infineon Technologies Infineon_FP50R12W2T7_DataSheet_v03_00_EN-1921349.pdf IGBT Modules N
Produkt ist nicht verfügbar
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FP50R12W2T7PBPSA1 Infineon_FP50R12W2T7_DataSheet_v03_00_EN-1921349.pdf
Hersteller: Infineon Technologies
IGBT Modules N
Produkt ist nicht verfügbar
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH