FP75R12KT4PB11BPSA1 Infineon Technologies

Description: IGBT MODULE 1200V 150A MODULE, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 20 mW, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 150 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A, Operating Temperature: -40°C ~ 150°C, Configuration: Three Phase Inverter, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.