FP7G50US60 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: IGBT
Packaging: Tube
Package / Case: EPM7
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: EPM7
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V
Description: IGBT
Packaging: Tube
Package / Case: EPM7
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: EPM7
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V
auf Bestellung 2076 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 45.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FP7G50US60 Fairchild Semiconductor
Description: IGBT, Packaging: Tube, Package / Case: EPM7, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: EPM7, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V.