FPF2G120BF07ASP onsemi
Hersteller: onsemiDescription: IGBT MODULE 650V 40A 156W F2
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 170.67 EUR |
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Technische Details FPF2G120BF07ASP onsemi
Description: IGBT MODULE 650V 40A 156W F2, Packaging: Bulk, Package / Case: Module, Mounting Type: Through Hole, Input: Standard, Configuration: 3 Independent, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A, NTC Thermistor: Yes, Supplier Device Package: F2, IGBT Type: Field Stop, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 156 W, Current - Collector Cutoff (Max): 250 µA.
Weitere Produktangebote FPF2G120BF07ASP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FPF2G120BF07ASP | Hersteller : ON Semiconductor / Fairchild |
IGBT Modules High Power Module |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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| FPF2G120BF07ASP | Hersteller : onsemi |
Description: IGBT MODULE 650V 40A 156W F2 Packaging: Tray Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: F2 IGBT Type: Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA |
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