auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.57 EUR |
| 10+ | 6.81 EUR |
| 25+ | 6.44 EUR |
| 100+ | 5.58 EUR |
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Technische Details FQA10N80C-F109 onsemi / Fairchild
Description: MOSFET N-CH 800V 10A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.
Weitere Produktangebote FQA10N80C-F109
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FQA10N80C-F109 | Hersteller : ON Semiconductor |
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auf Bestellung 11250 Stücke: Lieferzeit 21-28 Tag (e) |
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FQA10N80C-F109 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FQA10N80C-F109 | Hersteller : onsemi |
Description: MOSFET N-CH 800V 10A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
Produkt ist nicht verfügbar |