FQA12P20
Produktcode: 182099
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Weitere Produktangebote FQA12P20
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQA12P20 | onsemi |
Description: MOSFET P-CH 200V 12.6A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FQA12P20 | onsemi / Fairchild |
MOSFET 200V P-Channel QFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQA12P20 |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 200V 12.6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET P-CH 200V 12.6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA12P20 |
![]() |
Hersteller: onsemi / Fairchild
MOSFET 200V P-Channel QFET
MOSFET 200V P-Channel QFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

