Weitere Produktangebote FQA27N25 nach Preis ab 2.25 EUR bis 6.62 EUR
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FQA27N25 | Hersteller : Fairchild Semiconductor |
 Description: POWER FIELD-EFFECT TRANSISTOR, 2Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 13.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V |
auf Bestellung 237 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA27N25 | Hersteller : onsemi / Fairchild |
MOSFETs 250V N-Channel QFET |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQA27N25 |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQA27N25 | Hersteller : ONS/FAI |
MOSFET N-CH 250V 27A TO3PN Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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FQA27N25 | Hersteller : onsemi |
Description: MOSFET N-CH 250V 27A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 13.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V |
Produkt ist nicht verfügbar |