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FQA7N90

FQA7N90 Fairchild Semiconductor

FAIRS12005-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 900V 7.4A TO3P
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
187+2.62 EUR
Mindestbestellmenge: 187
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Technische Details FQA7N90 Fairchild Semiconductor

Description: MOSFET N-CH 900V 7.4A TO3P, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 198W (Tc), Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3.

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FQA7N90 ONS/FAI FQA7N90.pdf MOSFET N-CH 900V 7.4A 1.55Om TO-3P Транзистори
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FQA7N90 FQA7N90 onsemi FQA7N90.pdf Description: MOSFET N-CH 900V 7.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Produkt ist nicht verfügbar
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FQA7N90 FQA7N90 onsemi / Fairchild FAIRS12005-1.pdf?t.download=true&u=5oefqw FQA7N90.pdf MOSFET 900V N-Channel QFET
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FQA7N90 FQA7N90.pdf
Hersteller: ONS/FAI
MOSFET N-CH 900V 7.4A 1.55Om TO-3P Транзистори
Produkt ist nicht verfügbar
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FQA7N90 FQA7N90.pdf
FQA7N90
Hersteller: onsemi
Description: MOSFET N-CH 900V 7.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Produkt ist nicht verfügbar
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FQA7N90 FAIRS12005-1.pdf?t.download=true&u=5oefqw FQA7N90.pdf
FQA7N90
Hersteller: onsemi / Fairchild
MOSFET 900V N-Channel QFET
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