Technische Details FQA9N90-F109 ON Semiconductor
Description: MOSFET N-CH 900V 8.6A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V.
Weitere Produktangebote FQA9N90-F109 nach Preis ab 3.68 EUR bis 9.03 EUR
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FQA9N90-F109 | Fairchild Semiconductor |
 Description: POWER FIELD-EFFECT TRANSISTOR, 8Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
auf Bestellung 398 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA9N90-F109 | onsemi / Fairchild |
MOSFETs 900V N-Channel QFET |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQA9N90-F109 | ON Semiconductor |
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auf Bestellung 4944 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FQA9N90-F109 |
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Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 150+ | 3.68 EUR |
| FQA9N90-F109 |
|
Hersteller: onsemi / Fairchild
MOSFETs 900V N-Channel QFET
MOSFETs 900V N-Channel QFET
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.03 EUR |
| 10+ | 7.58 EUR |
| 25+ | 7.16 EUR |
| 100+ | 5.9 EUR |
| 250+ | 5.28 EUR |
| 450+ | 5.01 EUR |
| 900+ | 4.58 EUR |
| FQA9N90-F109 |
|
Hersteller: ON Semiconductor
auf Bestellung 4944 Stücke:
Lieferzeit 21-28 Tag (e)