FQB11N40CTM onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 4.31 EUR |
| 10+ | 3.85 EUR |
| 25+ | 3.64 EUR |
| 100+ | 3.15 EUR |
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Technische Details FQB11N40CTM onsemi / Fairchild
Description: MOSFET N-CH 400V 10.5A D2PAK, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 135W (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote FQB11N40CTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQB11N40CTM | onsemi |
 Description: MOSFET N-CH 400V 10.5A D2PAKPackage / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FQB11N40CTM | onsemi |
Description: MOSFET N-CH 400V 10.5A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQB11N40CTM |
|
Hersteller: onsemi
Description: MOSFET N-CH 400V 10.5A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 400V 10.5A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQB11N40CTM |
|
Hersteller: onsemi
Description: MOSFET N-CH 400V 10.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 400V 10.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH