FQB16N15TM Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 150V 16.4A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.2A, 10V
Power Dissipation (Max): 3.75W (Ta), 108W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 284+ | 1.6 EUR |
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Technische Details FQB16N15TM Fairchild Semiconductor
Description: MOSFET N-CH 150V 16.4A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 8.2A, 10V, Power Dissipation (Max): 3.75W (Ta), 108W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V.
Weitere Produktangebote FQB16N15TM nach Preis ab 1.33 EUR bis 1.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
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| FQB16N15TM | Hersteller : ON Semiconductor |
FQB16N15TM |
auf Bestellung 683 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQB16N15TM | Hersteller : Fairchild |
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auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |