FQB34N20LTM onsemi
Hersteller: onsemiDescription: MOSFET N-CH 200V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.53 EUR |
| 1600+ | 2.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQB34N20LTM onsemi
Description: MOSFET N-CH 200V 31A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V, Power Dissipation (Max): 3.13W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V.
Weitere Produktangebote FQB34N20LTM nach Preis ab 3.1 EUR bis 7.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FQB34N20LTM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 31A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V |
auf Bestellung 5120 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FQB34N20LTM | Hersteller : onsemi / Fairchild |
MOSFETs 200V Single |
auf Bestellung 608 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| FQB34N20LTM | Hersteller : Fairchild |
Transistor N-Channel MOSFET; 200V; 20V; 80mOhm; 31A; 180W; -55°C ~ 150°C; FQB34N20LTM TFQB34n20ltm Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
 |
FQB34N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FQB34N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FQB34N20LTM | Hersteller : ONSEMI |
FQB34N20LTM SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||||
 |
FQB34N20LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |