| Anzahl | Preis |
|---|---|
| 1+ | 6.27 EUR |
| 10+ | 5.63 EUR |
| 25+ | 5.33 EUR |
| 100+ | 4.63 EUR |
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Technische Details FQB34N20TM-AM002 onsemi / Fairchild
Description: MOSFET N-CH 200V 31A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 3.13W (Ta), 180W (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote FQB34N20TM-AM002
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQB34N20TM-AM002 | onsemi |
 Description: MOSFET N-CH 200V 31A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
FQB34N20TM-AM002 | onsemi |
Description: MOSFET N-CH 200V 31A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQB34N20TM-AM002 |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQB34N20TM-AM002 |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH