FQD20N06 UMW
Hersteller: UMW
Description: MOSFET N-CH 60V 16.8A DPAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.24 EUR |
| 15+ | 1.4 EUR |
| 50+ | 1.05 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.71 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
10 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FQD20N06 UMW
Description: MOSFET N-CH 60V 16.8A DPAK, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 38W (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.
Weitere Produktangebote FQD20N06
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
FQD20N06 | UMW |
Description: MOSFET N-CH 60V 16.8A DPAKPackaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
FQD20N06 | onsemi / Fairchild |
MOSFETs QF 60V 63MOHM DPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQD20N06 |
![]() |
Hersteller: UMW
Description: MOSFET N-CH 60V 16.8A DPAK
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: MOSFET N-CH 60V 16.8A DPAK
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FQD20N06 |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs QF 60V 63MOHM DPAK
MOSFETs QF 60V 63MOHM DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


