Technische Details FQD6N50CTM ON Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 2.7A, Pulsed drain current: 18A, Power dissipation: 61W, Case: DPAK, Gate-source voltage: ±30V, On-state resistance: 1.2Ω, Mounting: SMD, Gate charge: 25nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FQD6N50CTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FQD6N50CTM | Hersteller : ON Semiconductor / Fairchild |
 MOSFET 500V N-Channel Adv Q-FET C-Series |
auf Bestellung 1752 Stücke: Lieferzeit 14-28 Tag (e) |
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FQD6N50CTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Pulsed drain current: 18A Power dissipation: 61W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD6N50CTM | Hersteller : ON Semiconductor |
Description: MOSFET N-CH 500V 4.5A DPAK |
Produkt ist nicht verfügbar |
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FQD6N50CTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Pulsed drain current: 18A Power dissipation: 61W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |