FQI13N50CTU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 14185 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 211+ | 2.34 EUR |
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Technische Details FQI13N50CTU Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote FQI13N50CTU nach Preis ab 3.68 EUR bis 5.07 EUR
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FQI13N50CTU | Hersteller : onsemi / Fairchild |
MOSFET N-CH/500V/13A/QFET |
auf Bestellung 999 Stücke: Lieferzeit 10-14 Tag (e) |
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FQI13N50CTU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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| FQI13N50CTU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 195W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 52A Power dissipation: 195W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQI13N50CTU | Hersteller : onsemi |
Description: MOSFET N-CH 500V 13A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FQI13N50CTU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 195W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 52A Power dissipation: 195W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |