| Anzahl | Preis |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.85 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.37 EUR |
| 4000+ | 0.35 EUR |
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Technische Details FQN1N50CTA onsemi / Fairchild
Description: MOSFET N-CH 500V 380MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 890mW (Ta), 2.08W (Tc), Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V, Current - Continuous Drain (Id) @ 25°C: 380mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).
Weitere Produktangebote FQN1N50CTA nach Preis ab 0.64 EUR bis 1.57 EUR
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FQN1N50CTA | onsemi |
 Description: MOSFET N-CH 500V 380MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 890mW (Ta), 2.08W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Current - Continuous Drain (Id) @ 25°C: 380mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Cut Tape (CT) |
auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQN1N50CTA |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 19+ | 0.97 EUR |
| 100+ | 0.64 EUR |