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FQN1N60CTA

FQN1N60CTA Fairchild Semiconductor

FAIRS46432-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 37002 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1461+0.42 EUR
Mindestbestellmenge: 1461 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FQN1N60CTA Fairchild Semiconductor

Description: MOSFET N-CH 600V 300MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Tc), Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V, Power Dissipation (Max): 1W (Ta), 3W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.

Weitere Produktangebote FQN1N60CTA nach Preis ab 0.35 EUR bis 1.74 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FQN1N60CTA FQN1N60CTA onsemi fqn1n60c-d.pdf Description: MOSFET N-CH 600V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.44 EUR
4000+0.4 EUR
6000+0.38 EUR
10000+0.36 EUR
14000+0.35 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQN1N60CTA FQN1N60CTA onsemi / Fairchild FQN1N60C_D-1809836.pdf MOSFET 600V NCH MOSFET
auf Bestellung 17559 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.34 EUR
10+1.11 EUR
100+0.81 EUR
500+0.67 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQN1N60CTA FQN1N60CTA onsemi fqn1n60c-d.pdf Description: MOSFET N-CH 600V 300MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2279 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.74 EUR
20+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQN1N60CTA fqn1n60c-d.pdf
FQN1N60CTA
Hersteller: onsemi
Description: MOSFET N-CH 600V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.44 EUR
4000+0.4 EUR
6000+0.38 EUR
10000+0.36 EUR
14000+0.35 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQN1N60CTA FQN1N60C_D-1809836.pdf
FQN1N60CTA
Hersteller: onsemi / Fairchild
MOSFET 600V NCH MOSFET
auf Bestellung 17559 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.34 EUR
10+1.11 EUR
100+0.81 EUR
500+0.67 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQN1N60CTA fqn1n60c-d.pdf
FQN1N60CTA
Hersteller: onsemi
Description: MOSFET N-CH 600V 300MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2279 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.74 EUR
20+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH