FQN1N60CTA Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 37002 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1461+ | 0.35 EUR |
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Technische Details FQN1N60CTA Fairchild Semiconductor
Description: MOSFET N-CH 600V 300MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Tc), Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V, Power Dissipation (Max): 1W (Ta), 3W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote FQN1N60CTA nach Preis ab 0.29 EUR bis 1.46 EUR
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FQN1N60CTA | Hersteller : onsemi |
Description: MOSFET N-CH 600V 300MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V Power Dissipation (Max): 1W (Ta), 3W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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FQN1N60CTA | Hersteller : onsemi / Fairchild |
MOSFET 600V NCH MOSFET |
auf Bestellung 17559 Stücke: Lieferzeit 10-14 Tag (e) |
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FQN1N60CTA | Hersteller : onsemi |
Description: MOSFET N-CH 600V 300MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V Power Dissipation (Max): 1W (Ta), 3W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 2279 Stücke: Lieferzeit 10-14 Tag (e) |
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FQN1N60CTA | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |