Produkte > ONSEMI > FQN1N60CTA
FQN1N60CTA

FQN1N60CTA onsemi

fqn1n60c-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 600V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+0.48 EUR
6000+ 0.45 EUR
10000+ 0.42 EUR
Mindestbestellmenge: 2000
Produktrezensionen
Produktbewertung abgeben

Technische Details FQN1N60CTA onsemi

Description: MOSFET N-CH 600V 300MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Tc), Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V, Power Dissipation (Max): 1W (Ta), 3W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.

Weitere Produktangebote FQN1N60CTA nach Preis ab 0.5 EUR bis 1.66 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FQN1N60CTA FQN1N60CTA Hersteller : Fairchild Semiconductor FAIRS46432-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 80002 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1461+0.5 EUR
Mindestbestellmenge: 1461
FQN1N60CTA FQN1N60CTA Hersteller : onsemi fqn1n60c-d.pdf Description: MOSFET N-CH 600V 300MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 1384 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.21 EUR
100+ 0.84 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
FQN1N60CTA FQN1N60CTA Hersteller : onsemi / Fairchild FQN1N60C_D-1809836.pdf MOSFET 600V NCH MOSFET
auf Bestellung 17559 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
32+1.66 EUR
38+ 1.38 EUR
100+ 1.01 EUR
500+ 0.83 EUR
Mindestbestellmenge: 32
FQN1N60CTA FQN1N60CTA Hersteller : ON Semiconductor fqn1n60c-d.pdf Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Fan-Fold
Produkt ist nicht verfügbar
FQN1N60CTA FQN1N60CTA Hersteller : ONSEMI fqn1n60c-d.pdf FAIRS46432-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQN1N60CTA FQN1N60CTA Hersteller : ONSEMI fqn1n60c-d.pdf FAIRS46432-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar