FQP11N50CF Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 500V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
auf Bestellung 2116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 165+ | 2.81 EUR |
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Technische Details FQP11N50CF Fairchild Semiconductor
Description: MOSFET N-CH 500V 11A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 5.5A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V.
Weitere Produktangebote FQP11N50CF nach Preis ab 2.75 EUR bis 3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FQP11N50CF | Hersteller : FAIRCHILD |
FQP11N50CF |
auf Bestellung 934 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQP11N50CF | Hersteller : FAIRCHILD |
FQP11N50CF |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP11N50CF | Hersteller : onsemi |
Description: MOSFET N-CH 500V 11A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 5.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V |
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