Weitere Produktangebote FQP12N60C nach Preis ab 2.04 EUR bis 2.63 EUR
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FQP12N60C | ON Semiconductor |
 Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 817 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP12N60C | ON Semiconductor |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 3340 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP12N60C | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 225W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V |
auf Bestellung 3340 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQP12N60C |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 817 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 213+ | 2.55 EUR |
| 500+ | 2.26 EUR |
| FQP12N60C |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 3340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 213+ | 2.55 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.04 EUR |
| FQP12N60C |
|
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
auf Bestellung 3340 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 170+ | 2.63 EUR |